Analysis of the leakage current in junctionless nanowire transistors

Trevisoli R.; Trevisoli Doria R.; De Souza M.; Antonio Pavanello M.

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Fecha

2013

Autor

Trevisoli R.

Trevisoli Doria R.

De Souza M.

Antonio Pavanello M.

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URI

https://repositorio.fei.edu.br/handle/FEI/1122

Descripción

This letter presents an analysis of the leakage current in Junctionless Nanowire Transistors. The analysis is performed using experimental data together with three-dimensional numerical simulations. The influences of the temperature, device dimensions, and doping concentration have been studied. The results of inversion-mode devices of similar dimensions are also presented for comparison purpose. © 2013 AIP Publishing LLC.

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