High temperature effects on harmonic distortion in submicron SOI graded-channel MOSFETs

Emam M.; Pavanello M.A.; Danneville F.; Vanhoenacker-Janvier D.; Raskin J.-P.

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Fecha

2011

Autor

Emam M.

Pavanello M.A.

Danneville F.

Vanhoenacker-Janvier D.

Raskin J.-P.

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URI

https://repositorio.fei.edu.br/handle/FEI/1139

Descripción

The effect of elevated temperature on the harmonic distortion in Graded-Channel MOSFETs is presented in this work. The Graded-Channel devices show interesting advantages in terms of nonlinear behavior compared to classical devices especially at higher temperatures up to 200°C. © (2011) Trans Tech Publications, Switzerland.

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