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FISH SOI MOSFET: Modeling, characterization and its application to improve the performance of analog ICs
(2011)
This paper is conceptual and introduces a new transistor layout style called FISH SOI MOSFET (FSM). It is an evolution of the Diamond device (DSM) and specially designed to preserve the Longitudinal Corner Effect (LCE) to ...
Using the wave layout style to boost the digital ICs electrical performance in the radioactive environment
(2015)
© The Electrochemical Society.This paper presents an experimental comparative study between the Metal-Oxide-Semiconductor Field Effect Transistors (MOSFET) manufactured with the Wave ("S" gate geometry) and the standard ...
Impact of Using the Octagonal Layout for SOI MOSFETs in a High-Temperature Environment
(2015)
© 2015 IEEE.The impact of high-temperature effects is experimentally investigated in the octagonal layout style for planar silicon-on-insulator (SOI) metal-oxide-semiconductor (MOS) field-effect transistors (MOSFETs), named ...
Diamond layout style impact on SOI MOSFET in high temperature environment
(2015)
© 2015 Elsevier Ltd.This work performs an experimental comparative study between the Diamond (hexagonal gate geometry) and Standard layouts styles for Metal-Oxide-Semiconductor Field Effect Transistor in high temperatures ...
Performance of electronic devices submitted to X-rays and high energy proton beams
(2012)
In this work we have studied the radiation effects on MOSFET electronic devices. The integrated circuits were exposed to 10 keV X-ray radiation and 2.6 MeV energy proton beam. We have irradiated MOSFET devices with two ...
Compact diamond MOSFET model accounting for PAMDLE applicable down 150 nm node
(2014)
© The Institution of Engineering and Technology 2014.The performance improvements for integrated circuit applications of silicon-on-insulator (SOI) metal-oxide semiconductor field-effect transistors (MOSFETs) implemented ...
Comparative study of the proton beam effects between the conventional and Circular-Gate MOSFETs
(2012)
The study of ionizing radiation effects on semiconductor devices is of great relevance for the global technological development and is a necessity in some strategic areas in Brazil. This work presents preliminary results ...
Diamond MOSFET: An innovative layout to improve performance of ICs
(2010)
A new planar MOSFET structure is proposed through a simple layout change, which modifies the gate geometric shape from rectangular to hexagonal in order to use the "corner effect concept" to enhance the resultant longitudinal ...
Using diamond layout style to boost MOSFET frequency response of analogue IC
(2014)
A way to improve the metal-oxide-semiconductor field effect transistor (MOSFET) analogue electrical performance, still little explored, is to modify their aspect form or ratio (AR) by the use of innovative layout styles. ...
VI-Based Measurement System Focusing on Space Applications
(2017)
© 2017, Springer Science+Business Media New York.This article describes in detail a custom, high-performance, compact, flexible and reconfigurable test equipment. This measurement system is able to perform, locally or ...