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Now showing items 11-16 of 16
Impact of designer knowledge in the interactive evolutionary optimisation of analogue CMOS ICs by using iMTGSPICE
(2019)
© The Institution of Engineering and Technology 2019.This Letter describes an innovative interactive evolutionary computational tool to optimise robust analogue complementary metal-oxide-semiconductor (CMOS) integrated ...
Electrical behavior of the Diamond layout style for MOSFETs in X-rays ionizing radiation environments
(2015)
© 2015 Elsevier B.V. All rights reserved.This paper aims to describe some innovative layout styles, which are capable to boost the electrical performance and, in the same time, the Total Ionizing Dose (TID) tolerance of ...
An Innovative Ellipsoidal Layout Style to Further Boost the Electrical Performance of MOSFETs
(2015)
© 1980-2012 IEEE.This letter describes the impact of using a new gate geometry (ellipsoidal) rather than the standard one (rectangular) to implement planar metal-oxide-semiconductor field-effect transistors (MOSFETs). Our ...
Comparative experimental study between tensile and compressive uniaxially stressed nmugfets under x-ray radiation focusing on analog behavior
(2013)
This paper describes a detailed experimental comparative study between nMuGFETs implemented with tensile and compressive stresses when submitted to X-ray radiation, taking into account different doses and different channel ...
Improving MOSFETs' TID Tolerance Through Diamond Layout Style
(2017)
© 2001-2011 IEEE.This letter describes an experimental comparative study of the total ionizing dose (TID) effects due to Co-60 gamma irradiation between hexagonal (Diamond) and conventional rectangular gates metal-oxide ...
Boosting the total ionizing dose tolerance of digital switches by using OCTO SOI MOSFET
(2015)
© 2015 IOP Publishing Ltd.This paper performs an experimental comparative study of the total ionizing dose effects due to the x-ray radiation between the silicon-on-insulator (SOI) metal-oxide semiconductor field-effect ...