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Performance of electronic devices submitted to X-rays and high energy proton beams
(2012)
In this work we have studied the radiation effects on MOSFET electronic devices. The integrated circuits were exposed to 10 keV X-ray radiation and 2.6 MeV energy proton beam. We have irradiated MOSFET devices with two ...
VI-Based Measurement System Focusing on Space Applications
(2017)
© 2017, Springer Science+Business Media New York.This article describes in detail a custom, high-performance, compact, flexible and reconfigurable test equipment. This measurement system is able to perform, locally or ...
Improving MOSFETs' TID Tolerance Through Diamond Layout Style
(2017)
© 2001-2011 IEEE.This letter describes an experimental comparative study of the total ionizing dose (TID) effects due to Co-60 gamma irradiation between hexagonal (Diamond) and conventional rectangular gates metal-oxide ...