Extraction of Mobility Degradation and Source-and-Drain Resistance in MOSFETs
| dc.contributor.author | MUCI, Juan | |
| dc.contributor.author | LATORRE-REY, A. D. | |
| dc.contributor.author | GARCIA-SANCHEZ, Francisco | |
| dc.contributor.author | LUGO-MUÑOZ, D. | |
| dc.contributor.author | ORTIZ-CONDE, Adelmo | |
| dc.contributor.author | HO, C. S. | |
| dc.contributor.author | LIOU, J. J. | |
| dc.contributor.author | PAVANELLO, Marcelo A. | |
| dc.contributor.author | TREVISOLI, Renan Doria | |
| dc.date.accessioned | 2019-08-19T23:45:09Z | |
| dc.date.accessioned | 2023-05-03T20:36:56Z | |
| dc.date.available | 2019-08-19T23:45:09Z | |
| dc.date.available | 2023-05-03T20:36:56Z | |
| dc.date.issued | 2010 | |
| dc.identifier.citation | MUCI, Juan; LATORRE-REY, A. D.; GARCIA-SANCHEZ, Francisco; LUGO-MUÑOZ, D.; ORTIZ-CONDE, Adelmo; HO, C. S.; LIOU, J. J.; PAVANELLO, Marcelo A.; TREVISOLI, Renan Doria. Extraction of Mobility Degradation and Source-and-Drain Resistance in MOSFETs. JICS. Journal of Integrated Circuits and Systems (Ed. Português), v. 5, n. 2, p. 103-109, 2010. | |
| dc.identifier.issn | 1807-1953 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12032/89285 | |
| dc.relation.ispartof | JICS. Journal of Integrated Circuits and Systems (Ed. Português) | |
| dc.rights | Acesso Restrito | |
| dc.title | Extraction of Mobility Degradation and Source-and-Drain Resistance in MOSFETs | pt_BR |
| dc.type | Artigo | pt_BR |
Arquivos deste item
| Arquivos | Tamanho | Formato | Visualização |
|---|