Extraction of Mobility Degradation and Source-and-Drain Resistance in MOSFETs

dc.contributor.author	MUCI, Juan
dc.contributor.author	LATORRE-REY, A. D.
dc.contributor.author	GARCIA-SANCHEZ, Francisco
dc.contributor.author	LUGO-MUÑOZ, D.
dc.contributor.author	ORTIZ-CONDE, Adelmo
dc.contributor.author	HO, C. S.
dc.contributor.author	LIOU, J. J.
dc.contributor.author	PAVANELLO, Marcelo A.
dc.contributor.author	TREVISOLI, Renan Doria
dc.date.accessioned	2019-08-19T23:45:09Z
dc.date.accessioned	2023-05-03T20:36:56Z
dc.date.available	2019-08-19T23:45:09Z
dc.date.available	2023-05-03T20:36:56Z
dc.date.issued	2010
dc.identifier.citation	MUCI, Juan; LATORRE-REY, A. D.; GARCIA-SANCHEZ, Francisco; LUGO-MUÑOZ, D.; ORTIZ-CONDE, Adelmo; HO, C. S.; LIOU, J. J.; PAVANELLO, Marcelo A.; TREVISOLI, Renan Doria. Extraction of Mobility Degradation and Source-and-Drain Resistance in MOSFETs. JICS. Journal of Integrated Circuits and Systems (Ed. Português), v. 5, n. 2, p. 103-109, 2010.
dc.identifier.issn	1807-1953
dc.identifier.uri	https://hdl.handle.net/20.500.12032/89285
dc.relation.ispartof	JICS. Journal of Integrated Circuits and Systems (Ed. Português)
dc.rights	Acesso Restrito
dc.title	Extraction of Mobility Degradation and Source-and-Drain Resistance in MOSFETs	pt_BR
dc.type	Artigo	pt_BR

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