| dc.rights.license | Creative Commons "Este é um artigo publicado em acesso aberto sob uma licença Creative Commons (CC BY-NC-ND 4.0). Fonte: https://www.sciencedirect.com/science/article/pii/S0026271420308878?via%3Dihub#!. Acesso em: 25 nov. 2021. | |
| dc.contributor.author | VILAS BOAS, ALEXIS C. | |
| dc.contributor.author | MELO, MARCO ANTONIO ASSIS DE | |
| dc.contributor.author | Roberto Santos | |
| dc.contributor.author | Renato Giacomini | |
| dc.contributor.author | MEDINA N. H. | |
| dc.contributor.author | SEIXA, L. E. | |
| dc.contributor.author | FINCO, S. | |
| dc.contributor.author | PALOMO, F. R. | |
| dc.contributor.author | ROMERO-MAESTRE, A. | |
| dc.contributor.author | Marcilei Aparecida Guazzelli | |
| dc.date.accessioned | 2021-11-25T21:34:57Z | |
| dc.date.accessioned | 2023-05-03T20:36:19Z | |
| dc.date.available | 2021-11-25T21:34:57Z | |
| dc.date.available | 2023-05-03T20:36:19Z | |
| dc.date.issued | 2021-01-05 | |
| dc.identifier.citation | VILAS BOAS, A. C.; MELO, M. A. A. DE; SANTOS, R.B.B.; GIACOMINI, R.; MEDINA, N. H.; SEIXAS, L. E.; FINCO, S.; PALOMO, F. R.; ROMERO-MAESTRE, A.; GUAZZELLI, M. A. Ionizing radiation hardness tests of GaN HEMTs for harsh environments. MICROELECTRONICS RELIABILITY, v. 116, p. 114000, 2021. | |
| dc.identifier.issn | 0026-2714 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12032/89165 | |
| dc.description.abstract | The COTS power transistors based in GaN were exposed to TID effects by 10-keV X-rays. These HEMTs were tested in the On- and Off-state bias conditions. Switching tests were performed before and after irradiation steps. The devices were characterized at temperatures ranging from. | |
| dc.relation.ispartof | MICROELECTRONICS RELIABILITY | |
| dc.rights | Acesso Restrito | |
| dc.subject | TID | |
| dc.subject | Radiation effects | |
| dc.subject | GaN | |
| dc.subject | HEMT | |
| dc.title | Ionizing radiation hardness tests of GaN HEMTs for harsh environments | pt_BR |
| dc.type | Artigo | pt_BR |
