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dc.rights.licenseCreative Commons "Este é um artigo publicado em acesso aberto sob uma licença Creative Commons (CC BY-NC-ND 4.0). Fonte: https://www.sciencedirect.com/science/article/pii/S0026271420308878?via%3Dihub#!. Acesso em: 25 nov. 2021.
dc.contributor.authorVILAS BOAS, ALEXIS C.
dc.contributor.authorMELO, MARCO ANTONIO ASSIS DE
dc.contributor.authorRoberto Santos
dc.contributor.authorRenato Giacomini
dc.contributor.authorMEDINA N. H.
dc.contributor.authorSEIXA, L. E.
dc.contributor.authorFINCO, S.
dc.contributor.authorPALOMO, F. R.
dc.contributor.authorROMERO-MAESTRE, A.
dc.contributor.authorMarcilei Aparecida Guazzelli
dc.date.accessioned2021-11-25T21:34:57Z
dc.date.accessioned2023-05-03T20:36:19Z
dc.date.available2021-11-25T21:34:57Z
dc.date.available2023-05-03T20:36:19Z
dc.date.issued2021-01-05
dc.identifier.citationVILAS BOAS, A. C.; MELO, M. A. A. DE; SANTOS, R.B.B.; GIACOMINI, R.; MEDINA, N. H.; SEIXAS, L. E.; FINCO, S.; PALOMO, F. R.; ROMERO-MAESTRE, A.; GUAZZELLI, M. A. Ionizing radiation hardness tests of GaN HEMTs for harsh environments. MICROELECTRONICS RELIABILITY, v. 116, p. 114000, 2021.
dc.identifier.issn0026-2714
dc.identifier.urihttps://hdl.handle.net/20.500.12032/89165
dc.description.abstractThe COTS power transistors based in GaN were exposed to TID effects by 10-keV X-rays. These HEMTs were tested in the On- and Off-state bias conditions. Switching tests were performed before and after irradiation steps. The devices were characterized at temperatures ranging from.
dc.relation.ispartofMICROELECTRONICS RELIABILITY
dc.rightsAcesso Restrito
dc.subjectTID
dc.subjectRadiation effects
dc.subjectGaN
dc.subjectHEMT
dc.titleIonizing radiation hardness tests of GaN HEMTs for harsh environmentspt_BR
dc.typeArtigopt_BR


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