Ionizing radiation hardness tests of GaN HEMTs for harsh environments

VILAS BOAS, ALEXIS C.; MELO, MARCO ANTONIO ASSIS DE; Roberto Santos; Renato Giacomini; MEDINA N. H.; SEIXA, L. E.; FINCO, S.; PALOMO, F. R.; ROMERO-MAESTRE, A.; Marcilei Aparecida Guazzelli

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Data

2021-01-05

Autor

VILAS BOAS, ALEXIS C.

MELO, MARCO ANTONIO ASSIS DE

Roberto Santos

Renato Giacomini

MEDINA N. H.

SEIXA, L. E.

FINCO, S.

PALOMO, F. R.

ROMERO-MAESTRE, A.

Marcilei Aparecida Guazzelli

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URI

https://hdl.handle.net/20.500.12032/89165

Descrição

The COTS power transistors based in GaN were exposed to TID effects by 10-keV X-rays. These HEMTs were tested in the On- and Off-state bias conditions. Switching tests were performed before and after irradiation steps. The devices were characterized at temperatures ranging from.

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