| dc.contributor.author | Martínez-Guerrero, Esteban | |
| dc.contributor.author | Chabuel, F. | |
| dc.contributor.author | Daudin, B. | |
| dc.contributor.author | Rouvière, J.L. | |
| dc.contributor.author | Mariette, H. | |
| dc.date.accessioned | 2013-06-14T14:45:52Z | |
| dc.date.accessioned | 2023-03-21T20:43:08Z | |
| dc.date.available | 2013-06-14T14:45:52Z | |
| dc.date.available | 2023-03-21T20:43:08Z | |
| dc.date.issued | 2002-12-30 | |
| dc.identifier.citation | E. Martinez-Guerrero,a) F. Chabuel, B. Daudin, J. L. Rouvière, and H. Mariette, Control of the morphology transition for the growth of cubic GaN/AlN nanostructures, APPLIED PHYSICS LETTERS, Vol. 81, N. 27, pp 5117-5119, (2002) | es |
| dc.identifier.issn | 0003-6951 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12032/75124 | |
| dc.description | The Stransky–Krastanow growth mode of strained layers which gives rise to a morphology transition from two-dimensional layer to three-dimensional islands is studied in details for the cubic gallium nitride on cubic aluminum nitride ~GaN/AlN! system grown by molecular beam epitaxy.
Besides the lattice parameter mismatch which governs this transition, we evidence the importance of two other parameters, namely the substrate temperature and the III/V flux ratio. Tuning each of these two parameters enables to control the strain relaxation mechanism of a GaN deposited onto AlN, leading to the growth of either quantum wells or quantum dots. | es |
| dc.description.sponsorship | SFERE | es |
| dc.description.sponsorship | Region Rhône-Alpes | es |
| dc.description.sponsorship | ITESO, A.C. | es |
| dc.description.sponsorship | Consejo Nacional de Ciencia y Tecnología | es |
| dc.language.iso | eng | es |
| dc.publisher | American Institute of Physics (AIP) | es |
| dc.relation.ispartofseries | APPLIED PHYSICS LETTERS;Number 27 | |
| dc.rights.uri | http://quijote.biblio.iteso.mx/licencias/CC-BY-NC-ND-2.5-MX.pdf | es |
| dc.subject | Cubic GaN | es |
| dc.subject | Nanostructures | es |
| dc.subject | Molecular Beam Epitaxy | es |
| dc.subject | RHEED Oscillations | es |
| dc.subject | TEM | es |
| dc.title | Control of the morphology transition for the growth of cubic GaN-AlN nanostructures | es |
| dc.type | info:eu-repo/semantics/article | es |
