Control of the morphology transition for the growth of cubic GaN-AlN nanostructures
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Date
2002-12-30Author
Martínez-Guerrero, Esteban
Chabuel, F.
Daudin, B.
Rouvière, J.L.
Mariette, H.
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The Stransky–Krastanow growth mode of strained layers which gives rise to a morphology transition from two-dimensional layer to three-dimensional islands is studied in details for the cubic gallium nitride on cubic aluminum nitride ~GaN/AlN! system grown by molecular beam epitaxy. Besides the lattice parameter mismatch which governs this transition, we evidence the importance of two other parameters, namely the substrate temperature and the III/V flux ratio. Tuning each of these two parameters enables to control the strain relaxation mechanism of a GaN deposited onto AlN, leading to the growth of either quantum wells or quantum dots.SFERE
Region Rhône-Alpes
ITESO, A.C.
Consejo Nacional de Ciencia y Tecnología