| dc.contributor.author | Dang, Le Si | |
| dc.contributor.author | Fishman, G. | |
| dc.contributor.author | Mariette, H. | |
| dc.contributor.author | Adelmann, Christoph | |
| dc.contributor.author | Martínez-Guerrero, Esteban | |
| dc.contributor.author | Simon, Julia | |
| dc.contributor.author | Daudin, B. | |
| dc.contributor.author | Monroy, E. | |
| dc.contributor.author | Pelekanos, N.T. | |
| dc.contributor.author | Rouvière, J.L. | |
| dc.contributor.author | Cho, Y.H. | |
| dc.date.accessioned | 2013-06-14T15:09:46Z | |
| dc.date.accessioned | 2023-03-10T16:54:16Z | |
| dc.date.available | 2013-06-14T15:09:46Z | |
| dc.date.available | 2023-03-10T16:54:16Z | |
| dc.date.issued | 2003-02-14 | |
| dc.identifier.citation | Le Si Dang, G. Fishman and H. Mariette, C. Adelmann, E. Martinez, J. Simon, B. Daudin, E. Monroy, N. Pelekanos and J. L. Rouviere, and Y. H. Cho, GaN Quantum Dots: Physics and Applications, Journal of the Korean Physical Society, Vol. 42, pp. S657-S661, (2003) | es |
| dc.identifier.uri | https://hdl.handle.net/20.500.12032/69313 | |
| dc.description | Recent works by our group on hexagonal and cubic GaN/AlN quantum dots grown by molecular beam epitaxy are reviewed. It is shown that the growth of GaN on AlN can occur either in a layerby-
layer mode to form quantum wells or in the Stranski-Krastanow mode to form self-assembled quantum dots. High resolution transmission electron microscopy reveals that quantum dots are
truncated pyramids (typically 3 nm high and 15 nm wide), nucleating on top of a wetting layer.
The existence of internal electric elds of 7 MV/cm in hexagonal quantum dots is evidenced by observations of various physical e ects related to the quantum con ned Stark e ect, e.g. energy
redshift of the interband transition, decrease of its oscillator strength, or enhancement of the exciton interaction with LO phonons. Prospects for UV and near-IR applications, using interband and
intersubband transitions of GaN/AlN quantum dots, respectively, will be discussed also in this presentation. | es |
| dc.description.sponsorship | Region Rhône-Alpes | es |
| dc.language.iso | eng | es |
| dc.publisher | Korean Physical Society | es |
| dc.relation.ispartofseries | Journal of the Korean Physical Society;Vol. 42 | |
| dc.rights.uri | http://quijote.biblio.iteso.mx/licencias/CC-BY-NC-ND-2.5-MX.pdf | es |
| dc.subject | Self-assembled Quantum Dot | es |
| dc.subject | Nitride Semiconductors | es |
| dc.subject | Excitons | es |
| dc.subject | Quantum Confined Stark Effect | es |
| dc.subject | TEM | es |
| dc.subject | Photoluminiscence | es |
| dc.subject | Cathodoluminiscence | es |
| dc.subject | UV Laser | es |
| dc.title | GaN Quantum Dots: Physics and Applications | es |
| dc.type | info:eu-repo/semantics/article | es |
