GaN Quantum Dots: Physics and Applications
Fecha
2003-02-14Autor
Dang, Le Si
Fishman, G.
Mariette, H.
Adelmann, Christoph
Martínez-Guerrero, Esteban
Simon, Julia
Daudin, B.
Monroy, E.
Pelekanos, N.T.
Rouvière, J.L.
Cho, Y.H.
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Recent works by our group on hexagonal and cubic GaN/AlN quantum dots grown by molecular beam epitaxy are reviewed. It is shown that the growth of GaN on AlN can occur either in a layerby- layer mode to form quantum wells or in the Stranski-Krastanow mode to form self-assembled quantum dots. High resolution transmission electron microscopy reveals that quantum dots are truncated pyramids (typically 3 nm high and 15 nm wide), nucleating on top of a wetting layer. The existence of internal electric elds of 7 MV/cm in hexagonal quantum dots is evidenced by observations of various physical e ects related to the quantum con ned Stark e ect, e.g. energy redshift of the interband transition, decrease of its oscillator strength, or enhancement of the exciton interaction with LO phonons. Prospects for UV and near-IR applications, using interband and intersubband transitions of GaN/AlN quantum dots, respectively, will be discussed also in this presentation.Region Rhône-Alpes