| dc.rights.license | Creative Commons "Este é um artigo publicado em acesso aberto sob uma licença Creative Commons (CC BY 3.0). Fonte: https://publishingsupport.iopscience.iop.org/licence-policy-for-articles-published-on-a-gold-open-access-basis/. Acesso em: 28 jun 2021 | |
| dc.contributor.author | ALBERTON, S G | |
| dc.contributor.author | MEDINA, N H | |
| dc.contributor.author | ADDED, N | |
| dc.contributor.author | AGUIAR, V A P | |
| dc.contributor.author | MENEGASSO, R | |
| dc.contributor.author | MACCHIONE, E L A | |
| dc.contributor.author | GUAZZELLI, Marcilei Aparecida | |
| dc.date.issued | 2019-01-05 | |
| dc.identifier.citation | ALBERTON, S. G.; MEDINA, N. H.; ADDED, N.; AGUIAR, V. A. P; MENEGASSO, R.; MACCHIONE, E. L. A.; SILVEIRA, M. A. G. Single-event effects: experimental setup for power MOSFETs and diffusion model for cross section calculations in low-voltage MOSFETs. JOURNAL OF PHYSICS. CONFERENCE SERIES (PRINT), v. 1291, p. 012045, 2019. | |
| dc.identifier.issn | 1742-6588 | |
| dc.identifier.uri | https://repositorio.fei.edu.br/handle/FEI/3242 | |
| dc.description.abstract | MOSFETs are subject to di erent types of Single-Event E ects (SEEs) induced by heavy ions, with low-voltage MOSFETs being more susceptible to non-destructive e ects, such as Single-Event Transients, than high-voltage MOSFETs which may also be susceptible to
destructive e ects. In this paper an experimental setup used to study SEEs in power MOSFETs at the S~ao Paulo 8UD Pelletron accelerator and computational simulations for SEE cross section
calculations in low-voltage MOSFETs are presented. | |
| dc.relation.ispartof | JOURNAL OF PHYSICS. CONFERENCE SERIES (PRINT) | |
| dc.rights | Acesso Aberto | |
| dc.title | Single-event effects: experimental setup for power MOSFETs and diffusion model for cross section calculations in low-voltage MOSFETs | pt_BR |
| dc.type | Artigo | pt_BR |
