Single-event effects: experimental setup for power MOSFETs and diffusion model for cross section calculations in low-voltage MOSFETs

Abstract

MOSFETs are subject to di erent types of Single-Event E ects (SEEs) induced by heavy ions, with low-voltage MOSFETs being more susceptible to non-destructive e ects, such as Single-Event Transients, than high-voltage MOSFETs which may also be susceptible to destructive e ects. In this paper an experimental setup used to study SEEs in power MOSFETs at the S~ao Paulo 8UD Pelletron accelerator and computational simulations for SEE cross section calculations in low-voltage MOSFETs are presented.