Reduced electric field in junctionless transistors
View/
Date
2010Author
Colinge, Jean-Pierre
DORIA, R. T.;Doria, Rodrigo T.;Doria, Rodrigo Trevisoli;DORIA, R.T.;Rodrigo Doria, T.;DORIA, RODRIGO
Lee, Chi-Woo
Ferain, Isabelle
Akhavan, Nima Dehdashti
Yan, Ran
Razavi, Pedram
Yu, Ran
Nazarov, Alexei N.
Metadata
Show full item recordCollections
Related items
Showing items related by title, author, creator and subject.
-
The Roles of the Gate Bias, Doping Concentration, Temperature and Geometry on the Harmonic Distortion of Junctionless Nanowire Transistors Operating in the Linear Regime
DORIA, Rodrigo Trevisoli; TREVISOLI, Renan Doria; DE SOUZA, Michelly; CUETO, Magali Estrada; CERDEIRA, Antonio; Pavanello, Marcelo Antonio (2014) -
UTBB MOSFETs Thermal Coupling Analysis in Technological Node Level
COSTA, F. J.; DORIA, R. T.; Rodrigo Trevisoli Doria (2020-07-31)The main goal of this work is to perform a first-time analysis of the thermal cross-coupling in a system composed by some devices in an integration node degree composed by advanced UTBB SOI MOSFETs through numerical ... -
Analog Operation Temperature Dependence of nMOS Junctionless Transistors Focusing on Harmonic Distortion
DORIA, Rodrigo Trevisoli; YU, R.; KRANTI, Abhinav; COLINGE, J. -P.; PAVANELLO, Marcelo A.; PAVANELLO, M. A.; TREVISOLI, Renan Doria; DE SOUZA, Michelly; LEE, C. W.; FERAIN, Isabelle; DEHDASHTI-AKHAVAN, N.; YAN, R.; RAZAVI, P. (2011)