Cambiar navegación
Repositorio de la Asociación de Universidades Confiadas a la Compañía de Jesús en América Latina
español
português (Brasil)
English
español
español
português (Brasil)
English
Mi cuenta
Cambiar navegación
Ver ítem
Inicio
Centro Universitario FEI
Documentos - CUFEI
Ver ítem
Inicio
Centro Universitario FEI
Documentos - CUFEI
Ver ítem
JavaScript is disabled for your browser. Some features of this site may not work without it.
Evaluation of graded-channel SOI MOSFET operation at high temperatures
Ver/
Fecha
2006
Autor
Galeti M.
Pavanello M.A.
Martino J.A.
Metadatos
Mostrar el registro completo del ítem
URI
https://repositorio.fei.edu.br/handle/FEI/1066
Descripción
This paper presents a comparative analysis between graded-channel (GC) and conventional fully depleted SOI MOSFETs devices operating at high temperatures (up to 300 °C). The electrical characteristics such as threshold voltage and subthreshold slope were obtained experimentally and by two-dimensional numerical simulations. The results indicated that GC transistors present nearly the same behavior as the conventional SOI MOSFET devices with similar channel length. Experimental analysis of the gm/IDS ratio and Early voltage demonstrated that in GC devices the low-frequency open-loop gain is significantly improved in comparison to conventional SOI devices at room and at high-temperature due to the Early voltage increase. The multiplication factor and parasitic bipolar transistor gain obtained by two-dimensional numerical simulations allowed the analysis of the breakdown voltage, which was demonstrated to be improved in the GC as compared to conventional SOI transistors in thin silicon layer devices in the whole temperature range under analysis. © 2005 Elsevier Ltd. All rights reserved.
Colecciones
Documentos - CUFEI
Buscar en el repositorio
Esta colección
Listar
Todo el repositorio
Comunidades y Colecciones
Por fecha de publicación
Autores
Títulos
Materias
Esta colección
Por fecha de publicación
Autores
Títulos
Materias
Mi cuenta
Mi cuenta
Registro