Centro Universitario FEI: Recent submissions
Itens para a visualização no momento 1321-1340 of 2258
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Analyzing Reliability and Performance Trade-Offs of HLS-Based Designs in SRAM-Based FPGAs under Soft Errors
(2017)© 1963-2012 IEEE.The increasing system complexity of FPGA-based hardware designs and shortening of time-to-market have motivated the adoption of new designing methodologies focused on addressing the current need for ... -
Reliability on ARM Processors Against Soft Errors Through SIHFT Techniques
(2016)© 1963-2012 IEEE.ARM processors are leaders in embedded systems, delivering high-performance computing, power efficiency, and reduced cost. For this reason, there is a relevant interest for its use in the aerospace industry. ... -
Using the wave layout style to boost the digital ICs electrical performance in the radioactive environment
(2015)© The Electrochemical Society.This paper presents an experimental comparative study between the Metal-Oxide-Semiconductor Field Effect Transistors (MOSFET) manufactured with the Wave ("S" gate geometry) and the standard ... -
A commercial off-the-shelf pMOS transistor as X-ray and heavy ion detector
(2015)© Published under licence by IOP Publishing Ltd.Recently, p-channel metal-oxide-semiconductor (pMOS) transistors were suggested as fit for the task of detecting and quantifying ionizing radiation dose. Linearity, small ... -
Analog performance of standard and uniaxial strained triple-gate SOI FinFETs under x-ray radiation
(2014)© 2014 IOP Publishing Ltd.The influence of x-ray irradiation on the main digital and analog parameters of triple gate silicon-on- insulator FinFETs is investigated for unstrained and uniaxially strained devices. Comparing ... -
Analysis of SRAM-Based FPGA SEU Sensitivity to Combined EMI and TID-Imprinted Effects
(2016)© 2016 IEEE.This work proposes a novel methodology to evaluate SRAM-based FPGA's susceptibility with respect to Single-Event Upset (SEU) as a function of noise on VDD power pins, Total-Ionizing Dose (TID) and TID-imprinted ... -
Boosting the total ionizing dose tolerance of digital switches by using OCTO SOI MOSFET
(2015)© 2015 IOP Publishing Ltd.This paper performs an experimental comparative study of the total ionizing dose effects due to the x-ray radiation between the silicon-on-insulator (SOI) metal-oxide semiconductor field-effect ... -
Experimental setup for Single Event Effects at the São Paulo 8UD Pelletron Accelerator
(2014)In this work we present an experimental setup mounted in one of the beam lines at the São Paulo 8UD Pelletron Accelerator in order to study Single Event Effects in electronic devices. The basic idea is to use elastic ... -
A system to measure isomeric state half-lives in the 10 ns to 10 μs range
(2014)The Isomeric State Measurement System (SISMEI) was developed to search for isomeric nuclear states produced by fusion-evaporation reactions. The SISMEI consists of 10 plastic phoswich telescopes, two lead shields, one ... -
γ-Particle coincidence technique for the study of nuclear reactions
(2014)The Saci-Perere γ ray spectrometer (located at the Pelletron AcceleratorLaboratory - IFUSP) was employed to implement the γ-particle coincidence technique for the study of nuclear reaction mechanisms. For this, the 18O+110Pd ... -
Dynamic distribution of potassium in sugarcane
(2013)In this work the distribution of potassium in sugarcane has been studied during its growth. The soil was prepared with natural fertilizers prepared with sugarcane bagasse. For the measurement of potassium concentration in ... -
Performance of electronic devices submitted to X-rays and high energy proton beams
(2012)In this work we have studied the radiation effects on MOSFET electronic devices. The integrated circuits were exposed to 10 keV X-ray radiation and 2.6 MeV energy proton beam. We have irradiated MOSFET devices with two ...