Centro Universitario FEI: Envíos recientes
Mostrando ítems 1321-1340 de 2182
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Ionizing radiation effects in a rectifier circuit
(2019)© Published under licence by IOP Publishing Ltd.This work aims to study the effects of ionizing radiation on a half-wave rectifier circuit. The diodes of the circuit, rectifier and Zener, were exposed to X-rays of 10 keV ... -
Illuminated to dark ratio improvement in lateral SOI PIN photodiodes at high temperatures
(2014)This work presents a study of the illuminated to dark ratio (IDR) of lateral SOI PIN photodiodes. Measurements performed on fabricated devices show a fivefold improvement of the IDR when the devices are biased in accumulation ... -
Using variance information in magnetoencephalography measures of functional connectivity
(2013)The use of magnetoencephalography (MEG) to assess long range functional connectivity across large scale distributed brain networks is gaining popularity. Recent work has shown that electrodynamic networks can be assessed ... -
Modeling silicon on insulator MOS transistors with nonrectangular-gate layouts
(2006)This work presents a new and simple approach for modeling silicon on insulator metal-oxide-semiconductor (MOS) dc characteristics for nonrectangular layout devices, based on decomposition of the original shape into trapezoidal ... -
Operation of lateral SOI PIN photodiodes with back-gate bias and intrinsic length variation
(2013)This paper presents an analysis of the operation of lateral thin-film SOI PIN photodiodes for the detection of short wavelengths. Experimental measurements were done varying the back-gate bias in order to point out the ... -
Identification of psychopathic individuals using pattern classification of MRI images
(2011)Background: Psychopathy is a disorder of personality characterized by severe impairments of social conduct, emotional experience, and interpersonal behavior. Psychopaths consistently violate social norms and bring considerable ... -
A simple current model for edgeless SOI nMOSFET and a 3-D analysis
(2005)This work presents a new approach for the current model of thin-film, fully depleted SOI edgeless transistors, based on the asymmetric trapezoidal gate model. The most common current model for an edgeless transistor is ... -
Trapezoidal cross-sectional influence on FinFET threshold voltage and corner effects
(2008)Fin field effect transistors (FinFETS) are silicon-on-insulator (SOI) transistors with three-dimensional structures. As a result of some fabrication-process limitations (as nonideal anisotropic overetch) some FinFETs have ... -
Heuristically accelerated reinforcement learning modularization for multi-agent multi-objective problems
(2014)This article presents two new algorithms for finding the optimal solution of a Multi-agent Multi-objective Reinforcement Learning problem. Both algorithms make use of the concepts of modularization and acceleration by a ... -
Maximum-uncertainty linear discrimination analysis of first-episode schizophrenia subjects
(2011)Recent techniques of image analysis brought the possibility to recognize subjects based on discriminative image features. We performed a magnetic resonance imaging (MRI)-based classification study to assess its usefulness ...