Centro Universitario FEI: Envíos recientes
Mostrando ítems 1241-1260 de 2182
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Analyzing Reliability and Performance Trade-Offs of HLS-Based Designs in SRAM-Based FPGAs under Soft Errors
(2017)© 1963-2012 IEEE.The increasing system complexity of FPGA-based hardware designs and shortening of time-to-market have motivated the adoption of new designing methodologies focused on addressing the current need for ... -
Portable X-ray fluorescence system to measure Th and U concentrations
(2018)© 2018 Elsevier LtdThis study reports the results obtained in the analysis of waste material samples generated by the industries of phosphate fertilizers, in particular, the use of specific filters in a portable X-ray ... -
Reliability-Performance Analysis of Hardware and Software Co-Designs in SRAM-Based APSoCs
(2018)© 1963-2012 IEEE.All programmable system-on-chip (APSoC) devices provide higher system performance and programmable flexibility at lower costs compared to standalone field-programmable gate array devices and processors. ... -
Analyzing the Influence of the Angles of Incidence and Rotation on MBU Events Induced by Low LET Heavy Ions in a 28-nm SRAM-Based FPGA
(2017)© 1963-2012 IEEE.This paper shows the impact of low linear energy transfer heavy ions on the reliability of 28-nm Bulk static random access memory (RAM) cells from Artix-7 field-programmable gate array. Irradiation tests ... -
Extraction of natural radionuclides in TENORM waste phosphogypsum
(2018)© 2018 Published by Elsevier Ltd.Phosphate ore is the raw material for the production of fertilizers. Phosphogypsum with a high content of natural radionuclides, specifically those present in the decay series of 238U and ... -
Reliability on ARM Processors Against Soft Errors Through SIHFT Techniques
(2016)© 1963-2012 IEEE.ARM processors are leaders in embedded systems, delivering high-performance computing, power efficiency, and reduced cost. For this reason, there is a relevant interest for its use in the aerospace industry. ... -
Using the wave layout style to boost the digital ICs electrical performance in the radioactive environment
(2015)© The Electrochemical Society.This paper presents an experimental comparative study between the Metal-Oxide-Semiconductor Field Effect Transistors (MOSFET) manufactured with the Wave ("S" gate geometry) and the standard ... -
A commercial off-the-shelf pMOS transistor as X-ray and heavy ion detector
(2015)© Published under licence by IOP Publishing Ltd.Recently, p-channel metal-oxide-semiconductor (pMOS) transistors were suggested as fit for the task of detecting and quantifying ionizing radiation dose. Linearity, small ... -
A system to measure isomeric state half-lives in the 10 ns to 10 μs range
(2014)The Isomeric State Measurement System (SISMEI) was developed to search for isomeric nuclear states produced by fusion-evaporation reactions. The SISMEI consists of 10 plastic phoswich telescopes, two lead shields, one ... -
Experimental setup for Single Event Effects at the São Paulo 8UD Pelletron Accelerator
(2014)In this work we present an experimental setup mounted in one of the beam lines at the São Paulo 8UD Pelletron Accelerator in order to study Single Event Effects in electronic devices. The basic idea is to use elastic ... -
Analog performance of standard and uniaxial strained triple-gate SOI FinFETs under x-ray radiation
(2014)© 2014 IOP Publishing Ltd.The influence of x-ray irradiation on the main digital and analog parameters of triple gate silicon-on- insulator FinFETs is investigated for unstrained and uniaxially strained devices. Comparing ... -
Analysis of SRAM-Based FPGA SEU Sensitivity to Combined EMI and TID-Imprinted Effects
(2016)© 2016 IEEE.This work proposes a novel methodology to evaluate SRAM-based FPGA's susceptibility with respect to Single-Event Upset (SEU) as a function of noise on VDD power pins, Total-Ionizing Dose (TID) and TID-imprinted ... -
Boosting the total ionizing dose tolerance of digital switches by using OCTO SOI MOSFET
(2015)© 2015 IOP Publishing Ltd.This paper performs an experimental comparative study of the total ionizing dose effects due to the x-ray radiation between the silicon-on-insulator (SOI) metal-oxide semiconductor field-effect ...