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Electrical Behavior of Effects LCE and PAMDLE of the Ellipsoidal MOSFETs in a Huge Range of High Temperatures
(2020-01-05)
This paper presents the electrical behavior at high temperature-range of the effects presents in the non-standard gate layout style for MOSFETs, in which they are capable to boost the electrical performance in relation to ...
Methodology to optimize and reduce the total gate area of robust operational transconductance amplifiers by using diamond layout style for MOSFETs
(2020-11-22)
This paper describes a pioneering methodology to design, optimize, and reduce the total gate area of robust Operational
Transconductance Amplifiers (OTAs). The Single-Ended Single-Stage (SESS) OTA has been chosen to ...
Using the Octagonal Layout Style for MOSFETs to boost the Device Matching in Ionizing Radiation Environments
(2020-12-04)
This article describes an experimental comparative study of the matching between the Octo conventional (octagonal gate geometry) and Conventional (rectangular gate shape) n-channel Metal-Oxide-Semiconductor (MOS) Field ...
Using the Hexagonal Layout Style for MOSFETs to boost the Device Matching in Ionizing Radiation Environments
(2020-08-10)
This paper describes an experimental comparative study of the mismatching between the Diamond (hexagonal gate geometry) and Conventional (rectangular gate shape) n-chan-nel Metal-Oxide-Semiconductor (MOS) Field Effect ...
Optimization of a low noise amplifier with two technology nodes using an interactive evolutionary approach
(2021-01-05)
© 2021, Springer Science+Business Media, LLC, part of Springer Nature.Nowadays, wireless communications at frequencies of gigahertz have an increasing demand due to the ever-increasing number of electronic devices that ...