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Effect of the back bias on the analog performance of standard FD and UTBB transistors-based self-cascode structures
(2017)
© 2017 IOP Publishing Ltd.This work demonstrates that active back biasing can improve significantly the analog performance of two-transistors self-cascode structures. The study was performed by applying both standard and ...
An in-depth analysis of temperature effect on DIBL in UTBB FD SOI MOSFETs based on experimental data, numerical simulations and analytical models
(2017)
© 2016 Elsevier LtdThe Drain Induced Barrier Lowering (DIBL) behavior in Ultra-Thin Body and Buried oxide (UTBB) transistors is investigated in details in the temperature range up to 150 °C, for the first time to the best ...