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Charge-based continuous model for long-channel Symmetric Double-Gate Junctionless Transistors
A new charge-based continuous model for long-channel Symmetric Double-Gate Junctionless Transistors (SDGJLTM) is proposed and validated with simulations for doping concentrations of 5 × 1018 and 1 × 10 19 cm-3, as well as ...
Compact modeling of triple gate junctionless MOSFETs for accurate circuit design in a wide temperature range
© 2019 Elsevier LtdThis paper presents the extension of proposed physically-based continuous compact analytical model of triple gate junctionless nanowire transistors for accurate description of device electrical characteristics ...
Harmonic distortion analysis of double gate graded-channel MOSFETs operating in saturation
In this work we present an analysis of harmonic distortion (HD) in graded-channel (GC) gate-all-around (GAA) devices operating in saturation region for analog applications. The study has been performed through device ...