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Now showing items 11-16 of 16
Harmonic distortion analysis of double gate graded-channel MOSFETs operating in saturation
(2008)
In this work we present an analysis of harmonic distortion (HD) in graded-channel (GC) gate-all-around (GAA) devices operating in saturation region for analog applications. The study has been performed through device ...
Experimental and simulation analysis of electrical characteristics of common-source current mirrors implemented with asymmetric self-cascode silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistors
(2016)
© The Institution of Engineering and Technology 2016.In this paper, the performance of asymmetric self-cascode (A-SC) fully depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistors ...
High performance analog operation of double gate transistors with the graded-channel architecture at low temperatures
(2005)
This work studies the use of channel engineering by means of graded-channel profile on double gate SOI MOSFETs for improving the analog performance and comparing their output characteristics with conventional double gate ...
A charge-based continuous model for submicron graded-channel nMOSFET for analog circuit simulation
(2005)
In this work a continuous analytical model for analog simulation of submicron asymmetrically doped silicon-on-insulator (SOI) nMOSFET using the graded-channel (GC) architecture, valid from weak to strong inversion regimes, ...
Gain improvement in operational transconductance amplifiers using Graded-Channel SOI nMOSFETS
(2006)
This paper studies the performance of operational transconductance amplifiers (OTAs) fabricated with Graded-Channel (GC) SOI nMOSFETs and designed to provide high open-loop voltage gain or high gain-bandwidth characteristics. ...
Modeling of thin-film lateral SOI PIN diodes with an alternative multi-branch explicit current model
(2012)
We propose the use of an alternative multi-exponential model to describe multiple conduction mechanisms in thin-film SOI PIN diodes with parasitic series resistance over a wide operating temperature range, from 90 to 390 ...