Now showing items 1-3 of 3
UTBB MOSFETs Thermal Coupling Analysis in Technological Node Level
The main goal of this work is to perform a first-time analysis of the thermal cross-coupling in a system composed by some devices in an integration node degree composed by advanced UTBB SOI MOSFETs through numerical ...
Substrate Effect Evaluation by the Analysis of Intrinsic Capacitances in SOI UTBB Transistors
The main goal of this paper is to present the behavior of the substrate effect in Ultra-Thin Body and Buried Oxide (UTBB) SOI MOSFETs with respect to the back gate bias (VSUB) through DC and AC simulations validated to ...
The Correlation between the NBTI Effect and the Surface Potential and Density of Interface Traps in Junctionless Nanowire Transistors
This paper discusses the nature of degradation by NBTI effect in MOS junctionless devices when varying the density of interface traps and surface potential. The data obtained in simulations are compared with results from ...