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UTBB MOSFETs Thermal Coupling Analysis in Technological Node Level
The main goal of this work is to perform a first-time analysis of the thermal cross-coupling in a system composed by some devices in an integration node degree composed by advanced UTBB SOI MOSFETs through numerical ...
Substrate Effect Evaluation by the Analysis of Intrinsic Capacitances in SOI UTBB Transistors
The main goal of this paper is to present the behavior of the substrate effect in Ultra-Thin Body and Buried Oxide (UTBB) SOI MOSFETs with respect to the back gate bias (VSUB) through DC and AC simulations validated to ...