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3D simulation of triple-gate MOSFETs with different mobility regions
(2011-07-05)
In this paper we present a new approach for analyzing 3D structure triple-gate MOSFETs using three different regions, one at the top and two in the sidewalls of the fin, which allows for considering different carrier ...
Simulation of a miller OpAmp with FinFETs at high temperatures
For practical applications temperature can play an important role in the performance of a circuit. This paper describes the performance of a Miller Operational Amplifier with FinFET transistors operating in a wide temperature ...