Simulation of a miller OpAmp with FinFETs at high temperatures

Abstract

For practical applications temperature can play an important role in the performance of a circuit. This paper describes the performance of a Miller Operational Amplifier with FinFET transistors operating in a wide temperature range by circuit simulation. FinFETs were modeled using the Symmetric Doped Double-Gate Model introduced in SmartSPICE circuit simulator calibrated with measured data. Amplifier simulation, performed at 27°C, 100°C and 200°C, reproduced the amplifier behavior and the variation of gain and cutoff frequency. © The Electrochemical Society.