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UTBB MOSFETs Thermal Coupling Analysis in Technological Node Level
(2020-07-31)
The main goal of this work is to perform a first-time analysis of the thermal cross-coupling in a system composed by some devices in an integration node degree composed by advanced UTBB SOI MOSFETs through numerical ...
Substrate Effect Evaluation by the Analysis of Intrinsic Capacitances in SOI UTBB Transistors
(2020-05-26)
The main goal of this paper is to present the behavior of the substrate effect in Ultra-Thin Body and Buried Oxide (UTBB) SOI MOSFETs with respect to the back gate bias (VSUB) through DC and AC simulations validated to ...
Standard MOS Diodes Composed by SOI UTBB Transistors
(2022-08-05)
© 2022 IEEE.The main objective of this work is to present an analysis of the performance of UTBB SOI transistors working as standard diodes, where the implementation of ground planes and substrate bias are analyzed. It is ...