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Analysis of temperature variation influence on the analog performance of 45° rotated triple-gate nMuGFETs
(2012)
This work presents the analog performance of n-type triple-gate MuGFETs with high-k dielectrics and TiN gate material fabricated in 45° rotated SOI substrates comparing their performance with standard MuGFETs fabricated ...
An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devices
(2012)
Triple-gate devices are considered a promising solution for sub-20 nm era. Strain engineering has also been recognized as an alternative due to the increase in the carriers mobility it propitiates. The simulation of strained ...
Modeling of thin-film lateral SOI PIN diodes with an alternative multi-branch explicit current model
(2012)
We propose the use of an alternative multi-exponential model to describe multiple conduction mechanisms in thin-film SOI PIN diodes with parasitic series resistance over a wide operating temperature range, from 90 to 390 ...