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Charge-based compact analytical model for triple-gate junctionless nanowire transistors
(2016)
© 2016 Elsevier Ltd.A new compact analytical model for short channel triple gate junctionless transistors is proposed. Based on a previous model for double-gate transistors which neglected the fin height effects, a new 3-D ...
Compact modeling of triple gate junctionless MOSFETs for accurate circuit design in a wide temperature range
(2019)
© 2019 Elsevier LtdThis paper presents the extension of proposed physically-based continuous compact analytical model of triple gate junctionless nanowire transistors for accurate description of device electrical characteristics ...
Compact model for short-channel symmetric double-gate junctionless transistors
(2015)
© 2015 Elsevier Ltd.Abstract In this work a compact analytical model for short-channel double-gate junctionless transistor is presented, considering variable mobility and the main short-channel effects as threshold voltage ...