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Analytical model for the dynamic behavior of triple-gate junctionless nanowire transistors
(2016)
© 2015 IEEE.This paper presents an analytical model for the intrinsic capacitances and transconductances of triple-gate junctionless nanowire transistors. The model is based on a surface-potential drain current model, which ...
Analysis of the substrate bias effect on the interface trapped charges in junctionless nanowire transistors through low-frequency noise characterization
(2017)
© 2017 Elsevier B.V.This work presents, for the first time, an experimental analysis of the low-frequency noise and the effective trap density dependence of junctionless nanowire transistors (JNTs) on the substrate bias. ...