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Harmonic distortion analysis of triple gate SOI nanowire MOSFETS down to 100 K
(2017)
© 2017 Elsevier LtdThe linearity of triple gate nanowire transistors (NWs) implemented on a Silicon-On-Insulator (SOI) substrate is investigated in this work considering temperature (T) influence. The analysis is performed ...
Analysis of the substrate bias effect on the interface trapped charges in junctionless nanowire transistors through low-frequency noise characterization
(2017)
© 2017 Elsevier B.V.This work presents, for the first time, an experimental analysis of the low-frequency noise and the effective trap density dependence of junctionless nanowire transistors (JNTs) on the substrate bias. ...
Study of silicon n- and p-FET SOI nanowires concerning analog performance down to 100 K
(2017)
© 2016 Elsevier LtdThis work presents an analysis of the performance of silicon triple gate SOI nanowires aiming the investigation of analog parameters for both long and short channel n-type and p-MOSFETs. Several nanowires ...