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Analysis of source-follower buffers implemented with graded-channel SOI nMOSFETs operating at cryogenic temperatures
(2009)
This work studies the operation of source-follower buffers implemented with standard and graded-channel (GC) fully depleted (FD) SOI nMOSFETs at low temperatures. The analysis is performed by comparing the voltage gain of ...
Advantages of graded-channel SOI nMOSFETs for application as source-follower analog buffer
(2008)
In this work the performance of graded-channel (GC) SOI MOSFETs operating as source-follower buffers is presented. The experimental analysis is performed by comparing the gain and linearity of buffers implemented with GC ...
Experimental and simulation analysis of electrical characteristics of common-source current mirrors implemented with asymmetric self-cascode silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistors
(2016)
© The Institution of Engineering and Technology 2016.In this paper, the performance of asymmetric self-cascode (A-SC) fully depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistors ...
Modeling of thin-film lateral SOI PIN diodes with an alternative multi-branch explicit current model
(2012)
We propose the use of an alternative multi-exponential model to describe multiple conduction mechanisms in thin-film SOI PIN diodes with parasitic series resistance over a wide operating temperature range, from 90 to 390 ...