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In-depth low frequency noise evaluation of substrate rotation and strain engineering in N-type triple gate SOI Finfets
(2015)
© 2015 Elsevier B.V. All rights reserved.This work presents an experimental analysis of the low-frequency noise and the effective trap density of conventional, strained, rotated and strained-rotated SOI n-type FinFETs, ...
Different stress techniques and their efficiency on triple-gate SOI n-MOSFETs
(2015)
© 2014 Elsevier Ltd. All rights reserved.Three techniques to implement mechanical stress in n-channel Multiple Gate MOSFETs (MuGFETs) are investigated through 3D simulations and transconductance measurements. They are: ...
Analog performance of standard and uniaxial strained triple-gate SOI FinFETs under x-ray radiation
(2014)
© 2014 IOP Publishing Ltd.The influence of x-ray irradiation on the main digital and analog parameters of triple gate silicon-on- insulator FinFETs is investigated for unstrained and uniaxially strained devices. Comparing ...
Analysis of temperature variation influence on the analog performance of 45° rotated triple-gate nMuGFETs
(2012)
This work presents the analog performance of n-type triple-gate MuGFETs with high-k dielectrics and TiN gate material fabricated in 45° rotated SOI substrates comparing their performance with standard MuGFETs fabricated ...
Low-frequency noise of n-type triple gate FinFETs fabricated on standard and 45 rotated substrates
(2013)
This paper studies the impact of the 45 substrate rotation on the low-frequency noise (LFN) of triple gate nFinFETs. The overall LFN has been extracted for both standard and 45 substrate rotated devices of several fin ...
An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devices
(2012)
Triple-gate devices are considered a promising solution for sub-20 nm era. Strain engineering has also been recognized as an alternative due to the increase in the carriers mobility it propitiates. The simulation of strained ...
Comparative experimental study between tensile and compressive uniaxially stressed nmugfets under x-ray radiation focusing on analog behavior
(2013)
This paper describes a detailed experimental comparative study between nMuGFETs implemented with tensile and compressive stresses when submitted to X-ray radiation, taking into account different doses and different channel ...
Harmonic distortion of 2-MOS structures for MOSFET-C filters implemented with n-type unstrained and strained FINFETS
(2011)
This work investigates the harmonic distortion (HD) in 2-MOS balanced structures composed of triple gate FinFETs. HD has been evaluated through the determination of the third-order harmonic distortion (HD3), since this ...