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Junctionless nanowire transistors parameters extraction based on drain current measurements
© 2019 Elsevier LtdThe aim of this work is to propose and qualify a systematic method for parameters extraction of Junctionless Nanowire Transistors (JNTs) based on drain current measurements and compact modeling. As ...
Compact modeling of triple gate junctionless MOSFETs for accurate circuit design in a wide temperature range
© 2019 Elsevier LtdThis paper presents the extension of proposed physically-based continuous compact analytical model of triple gate junctionless nanowire transistors for accurate description of device electrical characteristics ...
Modeling the interface traps-related low frequency noise in triple-gate SOI junctionless nanowire transistors
© 2019 Elsevier B.V.The aim of this work is to propose a semi-analytical model for the low frequency noise caused by interface traps in Triple-Gate Junctionless Nanowire Transistors. The proposed model is based on a drain ...