Comparison between the behavior of submicron Graded-Channel SOI nMOSFETs with fully- and partially-depleted operations in a wide temperature range
Ver/
Fecha
201-10-14Autor
Michelly De Souza
EMAM, M.
VANHOENACKER-JANVIER, D.
RASKIN, J. P.
FLANDRE, D.
Marcelo Antonio Pavanello