Origin of the Low-Frequency Noise in the Asymmetric Self-Cascode Structure Composed by Fully Depleted SOI nMOSFETs

dc.contributor.author	ASSALTI, R.
dc.contributor.author	DORIA, RODRIGO T.
dc.contributor.author	FLANDRE, Denis
dc.contributor.author	SOUZA, Michelly de
dc.date.accessioned	2019-08-19T23:45:16Z
dc.date.accessioned	2023-05-03T20:38:47Z
dc.date.available	2019-08-19T23:45:16Z
dc.date.available	2023-05-03T20:38:47Z
dc.date.issued	2017
dc.identifier.citation	ASSALTI, R.; DORIA, RODRIGO T.; FLANDRE, Denis; SOUZA, Michelly de. Origin of the Low-Frequency Noise in the Asymmetric Self-Cascode Structure Composed by Fully Depleted SOI nMOSFETs. JICS. JOURNAL OF INTEGRATED CIRCUITS AND SYSTEMS (ED. PORTUGUÊS), v. 12, n. 2, p. 62-70, 2017.
dc.identifier.issn	1807-1953
dc.identifier.uri	https://hdl.handle.net/20.500.12032/89644
dc.relation.ispartof	JICS. JOURNAL OF INTEGRATED CIRCUITS AND SYSTEMS (ED. PORTUGUÊS)
dc.rights	Acesso Restrito
dc.title	Origin of the Low-Frequency Noise in the Asymmetric Self-Cascode Structure Composed by Fully Depleted SOI nMOSFETs	pt_BR
dc.type	Artigo	pt_BR

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