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dc.contributor.authorASSALTI, R.
dc.contributor.authorDORIA, RODRIGO T.
dc.contributor.authorFLANDRE, Denis
dc.contributor.authorSOUZA, Michelly de
dc.date.accessioned2019-08-19T23:45:16Z
dc.date.accessioned2023-05-03T20:38:47Z
dc.date.available2019-08-19T23:45:16Z
dc.date.available2023-05-03T20:38:47Z
dc.date.issued2017
dc.identifier.citationASSALTI, R.; DORIA, RODRIGO T.; FLANDRE, Denis; SOUZA, Michelly de. Origin of the Low-Frequency Noise in the Asymmetric Self-Cascode Structure Composed by Fully Depleted SOI nMOSFETs. JICS. JOURNAL OF INTEGRATED CIRCUITS AND SYSTEMS (ED. PORTUGUÊS), v. 12, n. 2, p. 62-70, 2017.
dc.identifier.issn1807-1953
dc.identifier.urihttps://hdl.handle.net/20.500.12032/89644
dc.relation.ispartofJICS. JOURNAL OF INTEGRATED CIRCUITS AND SYSTEMS (ED. PORTUGUÊS)
dc.rightsAcesso Restrito
dc.titleOrigin of the Low-Frequency Noise in the Asymmetric Self-Cascode Structure Composed by Fully Depleted SOI nMOSFETspt_BR
dc.typeArtigopt_BR


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