Quantum Efficiency Improvement of SOI p-i-n Lateral Diodes Operating as UV Detectors at High Temperatures
| dc.contributor.author | NOVO, CARLA | |
| dc.contributor.author | BUHLER, RUDOLF | |
| dc.contributor.author | BAPTISTA, JOAO | |
| dc.contributor.author | GIACOMINI, RENATO | |
| dc.contributor.author | AFZALIAN, ARYAN | |
| dc.contributor.author | FLANDRE, DENIS | |
| dc.date.accessioned | 2019-08-19T23:45:24Z | |
| dc.date.accessioned | 2023-05-03T20:37:49Z | |
| dc.date.available | 2019-08-19T23:45:24Z | |
| dc.date.available | 2023-05-03T20:37:49Z | |
| dc.date.issued | 2017 | |
| dc.identifier.citation | NOVO, CARLA; BUHLER, RUDOLF; BAPTISTA, JOAO; GIACOMINI, RENATO; AFZALIAN, ARYAN; FLANDRE, DENIS. Quantum Efficiency Improvement of SOI p-i-n Lateral Diodes Operating as UV Detectors at High Temperatures. IEEE Sensors Journal, v. 17, n. 6, p. 1641-1648, 2017. | |
| dc.identifier.issn | 1558-1748 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12032/89459 | |
| dc.relation.ispartof | IEEE Sensors Journal | |
| dc.rights | Acesso Restrito | |
| dc.title | Quantum Efficiency Improvement of SOI p-i-n Lateral Diodes Operating as UV Detectors at High Temperatures | pt_BR |
| dc.type | Artigo | pt_BR |
Arquivos deste item
| Arquivos | Tamanho | Formato | Visualização |
|---|