| dc.contributor.author | PERUZZI , VINICIUS VONO | |
| dc.contributor.author | CRUZ, WILLIAM | |
| dc.contributor.author | SILVA, GABRIEL AUGUSTO DA | |
| dc.contributor.author | SIMOEN, EDDY | |
| dc.contributor.author | CLAEYS, COR | |
| dc.contributor.author | Salvador Gimenez | |
| dc.date.accessioned | 2021-12-21T21:00:35Z | |
| dc.date.accessioned | 2023-05-03T20:37:45Z | |
| dc.date.available | 2021-12-21T21:00:35Z | |
| dc.date.available | 2023-05-03T20:37:45Z | |
| dc.date.issued | 2020-08-10 | |
| dc.identifier.citation | PERUZZI , V. V.; CRUZ, W.; SILVA, G. A.; SIMOEN, E.; CLAEYS, C.; GIMENEZ, S. Using the hexagonal layout style for MOSFETs to boost the device matching in Ionizing radiation environments. JICS. JOURNAL OF INTEGRATED CIRCUITS AND SYSTEMS (ED. PORTUGUÊS), v. 15, n. 2, p. 1-5, 2020. | |
| dc.identifier.issn | 1807-1953 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12032/89448 | |
| dc.description.abstract | This paper describes an experimental comparative study of the mismatching between the Diamond (hexagonal gate geometry) and Conventional (rectangular gate shape) n-chan-nel Metal-Oxide-Semiconductor (MOS) Field Effect Transis-tors (MOSFETs), which were manufactured in an 130 nm Sili-con-Germanium Bulk Complementary MOS (CMOS) technol-ogy and exposed to different X-rays Total Ionizing Doses (TIDs). The results indicate that the Diamond layout style with an alpha () angle equal to 90 ̊ for MOSFETs is capable of re-ducing the device mismatching by at least 17% regarding the electrical parameters studied as compared to the Conventional MOSFET (CnM) counterparts. Therefore, the Diamond layout style can be considered an alternative hardness-by-design (HBD) layout strategy to boost the electrical performance and TID tolerance of MOSFETs. | |
| dc.relation.ispartof | JICS. JOURNAL OF INTEGRATED CIRCUITS AND SYSTEMS (ED. PORTUGUÊS) | |
| dc.rights | Acesso Aberto | |
| dc.subject | Diamond Layout Style | |
| dc.subject | Hardness-by-design technique | |
| dc.subject | MOSFETs matching, analog CMOS IC | |
| dc.subject | Total Ion-izing Dose | |
| dc.title | Using the Hexagonal Layout Style for MOSFETs to boost the Device Matching in Ionizing Radiation Environments | pt_BR |
| dc.type | Artigo | pt_BR |
