Operation of lateral SOI PIN photodiodes with back-gate bias and intrinsic length variation
| dc.contributor.author | Novo C. | |
| dc.contributor.author | Giacomini R. | |
| dc.contributor.author | Afzalian A. | |
| dc.contributor.author | Flandre D. | |
| dc.date.accessioned | 2019-08-19T23:45:23Z | |
| dc.date.accessioned | 2023-05-03T20:36:31Z | |
| dc.date.available | 2019-08-19T23:45:23Z | |
| dc.date.available | 2023-05-03T20:36:31Z | |
| dc.date.issued | 2013 | |
| dc.identifier.citation | NOVO, C.; GIACOMINI, R.; AFZALIAN, A.; FLANDRE, D.. Operation of Lateral SOI PIN Photodiodes with Back-Gate Bias and Intrinsic Length Variation. ECS Transactions (Online), v. 53, n. 5, p. 121-126, 2013. | |
| dc.identifier.issn | 1938-5862 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12032/89206 | |
| dc.description.abstract | This paper presents an analysis of the operation of lateral thin-film SOI PIN photodiodes for the detection of short wavelengths. Experimental measurements were done varying the back-gate bias in order to point out the behavior of the device. The temperature influence was also analyzed in 300K to 500K range. In addition, by using two-dimensional numerical simulations, the intrinsic length (LI) was changed, with the purpose of predicting the performance of this photodetector in more advanced technologies. © The Electrochemical Society. | |
| dc.relation.ispartof | ECS Transactions | |
| dc.rights | Acesso Restrito | |
| dc.title | Operation of lateral SOI PIN photodiodes with back-gate bias and intrinsic length variation | |
| dc.type | Artigo de evento |
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