Operation of lateral SOI PIN photodiodes with back-gate bias and intrinsic length variation

dc.contributor.author	Novo C.
dc.contributor.author	Giacomini R.
dc.contributor.author	Afzalian A.
dc.contributor.author	Flandre D.
dc.date.accessioned	2019-08-19T23:45:23Z
dc.date.accessioned	2023-05-03T20:36:31Z
dc.date.available	2019-08-19T23:45:23Z
dc.date.available	2023-05-03T20:36:31Z
dc.date.issued	2013
dc.identifier.citation	NOVO, C.; GIACOMINI, R.; AFZALIAN, A.; FLANDRE, D.. Operation of Lateral SOI PIN Photodiodes with Back-Gate Bias and Intrinsic Length Variation. ECS Transactions (Online), v. 53, n. 5, p. 121-126, 2013.
dc.identifier.issn	1938-5862
dc.identifier.uri	https://hdl.handle.net/20.500.12032/89206
dc.description.abstract	This paper presents an analysis of the operation of lateral thin-film SOI PIN photodiodes for the detection of short wavelengths. Experimental measurements were done varying the back-gate bias in order to point out the behavior of the device. The temperature influence was also analyzed in 300K to 500K range. In addition, by using two-dimensional numerical simulations, the intrinsic length (LI) was changed, with the purpose of predicting the performance of this photodetector in more advanced technologies. © The Electrochemical Society.
dc.relation.ispartof	ECS Transactions
dc.rights	Acesso Restrito
dc.title	Operation of lateral SOI PIN photodiodes with back-gate bias and intrinsic length variation
dc.type	Artigo de evento

Ficheros en el ítem

Ficheros	Tamaño	Formato	Ver