Evaluation of triple-gate FinFETs with SiO2-HfO2-TiN gate stack under analog operation

Abstract

This work presents the analog performance of nMOS triple-gate FinFETs with high-κ dielectrics, TiN gate material and undoped body from DC measurements. Different fin widths and devices with and without halo implantation are explored. No halo FinFETs can achieve extremely large gain and improved unity gain frequency at similar channel length than halo counterparts. The FinFETs with 110 nm long channel achieve an intrinsic gain of 25 dB. Extremely large Early voltages have been measured on long channel nMOS with no halo and relatively wide fins compared to the results usually reported in the literature. The large Early voltage obtained suggests that the devices operate in the onset of volume inversion due to the low doping level of the device body. © 2007 Elsevier Ltd. All rights reserved.