The Influence of Back Gate Bias on the OCTO SOI MOSFET?s Response to X-ray Radiation
dc.contributor.author | FINO, L. N. S. | |
dc.contributor.author | Marcilei Aparecida Guazzelli da Silveira | |
dc.contributor.author | Christian Renaux | |
dc.contributor.author | FLANDRE, Denis | |
dc.contributor.author | GIMENEZ, S. P. | |
dc.date.accessioned | 2019-08-19T23:45:28Z | |
dc.date.accessioned | 2023-05-03T20:35:37Z | |
dc.date.available | 2019-08-19T23:45:28Z | |
dc.date.available | 2023-05-03T20:35:37Z | |
dc.date.issued | 2015 | |
dc.identifier.citation | FINO, L. N. S.; Marcilei Aparecida Guazzelli da Silveira; Christian Renaux; FLANDRE, Denis; GIMENEZ, S. P.. The Influence of Back Gate Bias on the OCTO SOI MOSFET?s Response to X-ray Radiation. JICS. Journal of Integrated Circuits and Systems (Ed. Português), v. 10, n. 1, p. 43-48, 2015. | |
dc.identifier.issn | 1807-1953 | |
dc.identifier.uri | https://hdl.handle.net/20.500.12032/89036 | |
dc.relation.ispartof | JICS. Journal of Integrated Circuits and Systems (Ed. Português) | |
dc.rights | Acesso Restrito | |
dc.title | The Influence of Back Gate Bias on the OCTO SOI MOSFET?s Response to X-ray Radiation | pt_BR |
dc.type | Artigo | pt_BR |
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