Comparative study of the proton beam effects between the conventional and Circular-Gate MOSFETs
dc.contributor.author | Cirne K. | |
dc.contributor.author | Silveira M.A.G. | |
dc.contributor.author | Santos R.B.B. | |
dc.contributor.author | Gimenez S.P. | |
dc.contributor.author | Barbosa M.D.L. | |
dc.contributor.author | Tabacniks M.H. | |
dc.contributor.author | Added N. | |
dc.contributor.author | Medina N.H. | |
dc.contributor.author | De Melo W.R. | |
dc.contributor.author | Seixas Jr. L.E. | |
dc.contributor.author | De Lima J.A. | |
dc.date.accessioned | 2019-08-19T23:47:18Z | |
dc.date.accessioned | 2023-05-03T20:35:23Z | |
dc.date.available | 2019-08-19T23:47:18Z | |
dc.date.available | 2023-05-03T20:35:23Z | |
dc.date.issued | 2012 | |
dc.identifier.citation | Cirne, K.; Seixas, L.E.; de Lima, J.A.; Silveira, M.A.G.; Santos, R.B.B.; Gimenez, S.P.; Barbosa, M.D.L.; Tabacniks, M.H.; ADDED, N.; Medina, N.H.; De Melo, W.R.. Comparative study of the proton beam effects between the conventional and Circular-Gate MOSFETs. Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms (Print), v. 273, p. 80-82, 2012. | |
dc.identifier.issn | 0168-583X | |
dc.identifier.uri | https://hdl.handle.net/20.500.12032/88992 | |
dc.description.abstract | The study of ionizing radiation effects on semiconductor devices is of great relevance for the global technological development and is a necessity in some strategic areas in Brazil. This work presents preliminary results of radiation effects in MOSFETs that were exposed to 3.2 Grad radiation dose produced by a 2.6-MeV proton beam. The focus of this work was to electrically characterize a Rectangular-Gate MOSFET (RGT) and a Circular-Gate MOSFET (CGT), manufactured with the On Semiconductor 0.5 μm standard CMOS fabrication process and to verify a suitable geometry for space applications. During the experiment, I DS × V GS curves were measured. After irradiation, the RGT off-state current (I OFF) increased approximately two orders of magnitude reaching practically the same value of the I OFF in the CGT, which only doubled its value. © 2011 Elsevier B.V. All rights reserved. | |
dc.relation.ispartof | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | |
dc.rights | Acesso Restrito | |
dc.title | Comparative study of the proton beam effects between the conventional and Circular-Gate MOSFETs | |
dc.type | Artigo de evento |
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