| dc.contributor.author | Estrada M. | |
| dc.contributor.author | Rivas M. | |
| dc.contributor.author | Garduno I. | |
| dc.contributor.author | Avila-Herrera F. | |
| dc.contributor.author | Cerdeira A. | |
| dc.contributor.author | Pavanello M. | |
| dc.contributor.author | Mejia I. | |
| dc.contributor.author | Quevedo-Lopez M.A. | |
| dc.date.accessioned | 2019-08-19T23:45:11Z | |
| dc.date.accessioned | 2023-05-03T20:33:53Z | |
| dc.date.available | 2019-08-19T23:45:11Z | |
| dc.date.available | 2023-05-03T20:33:53Z | |
| dc.date.issued | 2016 | |
| dc.identifier.citation | ESTRADA, M.; RIVAS, M.; GARDUÑO, I.; AVILA-HERRERA, F.; CERDEIRA, A.; PAVANELLO, M.; MEJIA, I.; QUEVEDO-LOPEZ, M.A.. Temperature dependence of the electrical characteristics up to 370K of amorphous In-Ga-ZnO thin film transistors. Microelectronics and Reliability, v. 56, p. 29-33, 2016. | |
| dc.identifier.issn | 0026-2714 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12032/88707 | |
| dc.description.abstract | © 2015 Elsevier Ltd.The temperature dependence in the typical temperature operating range from300 K up to 370 K of the electrical characteristics of IGZO TFTs fabricated at temperatures not exceeding 200 °C is presented and modeled. It is seen that up to T = 330 K, the transfer curves show a parallel shift toward more negative voltages. In both subthreshold and above threshold regimes, the drain current shows Arrhenius-type dependence. In the latter case, for low temperatures, the activation energy is around 0.35 eV for VGS=10 V, reducing as VGS is increased. The observed behavior is consistent with having the VRH transport mechanism as the predominant one in conduction. | |
| dc.relation.ispartof | Microelectronics Reliability | |
| dc.rights | Acesso Aberto | |
| dc.title | Temperature dependence of the electrical characteristics up to 370 K of amorphous In-Ga-ZnO thin film transistors | |
| dc.type | Artigo | |
