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dc.contributor.authorRayas-Sánchez, José E.
dc.contributor.authorPérez-Acosta, Luis N.
dc.date.accessioned2013-05-21T17:56:56Z
dc.date.accessioned2023-03-21T19:29:50Z
dc.date.available2013-05-21T17:56:56Z
dc.date.available2023-03-21T19:29:50Z
dc.date.issued2008-02
dc.identifier.citationL. N. Pérez-Acosta and J. E. Rayas-Sánchez, “A numerical optimization procedure to obtain SPICE MOSFET model level 1 parameters from model level 49,” in XIV International Workshop Iberchip (IWS 2008), Puebla, Mexico, Feb. 2008, ISBN-13 978-968-7938-03-5.es
dc.identifier.urihttps://hdl.handle.net/20.500.12032/74842
dc.descriptionWe propose in this paper a procedure to obtain SPICE MOSFET Model Level 1 parameters from SPICE MOSFET Model Level 49. Our proposed method follows a general curve fitting strategy using numerical optimization to extract the SPICE level 1 parameters from the characteristic curves of the corresponding MOSFET using SPICE level 49 model. The optimization procedure is described, including the definition of the objective function. We also review a classical method widely used for SPICE Model Level 1 parameter extraction based on linear regression. A comparison of the two methods is realized in terms of accuracy of the resultant models. Our proposed method for parameter extraction proves to be more accurate.es
dc.description.sponsorshipITESO, A.C.es
dc.description.sponsorshipConsejo Nacional de Ciencia y Tecnologíaes
dc.language.isoenges
dc.publisherXIV International Workshop Iberchipes
dc.relation.ispartofseriesInternational Workshop Iberchip;XIV
dc.rights.urihttp://quijote.biblio.iteso.mx/licencias/CC-BY-NC-ND-2.5-MX.pdfes
dc.subjectBSIM3es
dc.subjectNelder-Meades
dc.subjectMOSFET SPICE Modelses
dc.subjectNumerical Optimizationes
dc.titleA numerical optimization procedure to obtain SPICE MOSFET model level 1 parameters from model level 49es
dc.typeinfo:eu-repo/semantics/conferencePaperes


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