Self-assembled zinc blende GaN quantum dots grown
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Date
2000-08-07Author
Martínez-Guerrero, Esteban
Adelmann, Christoph
Chabuel, F.
Simon, Julia
Pelekanos, N.T.
Mula, Guido
Daudin, B.
Feuillet, G.
Mariette, H.
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Zinc blende ~ZB! GaN quantum dots have been grown by plasma-assisted molecular-beam epitaxy on AlN buffer layers using 3C-SiC~001! substrates. The two- to three-dimensional growth mode transition is studied by following the evolution of the reflection high-energy electron diffraction pattern. ZB GaN island layers are further examined by atomic force microscopy and transmission electron microscopy, extracting a mean island height of 1.6 nm and a mean diameter of 13 nm at a density of 1.331011 cm22. Embedded ZB GaN quantum dots show strong ultraviolet photoluminescence without any thermal quenching up to room temperature.SFERE
Region Rhône-Alpes
Consejo Nacional de Ciencia y Tecnología