| dc.contributor.author | Adelmann, Christoph | |
| dc.contributor.author | Martínez-Guerrero, Esteban | |
| dc.contributor.author | Mariette, H. | |
| dc.contributor.author | Feuillet, Guy | |
| dc.contributor.author | Daudin, B. | |
| dc.date.accessioned | 2013-06-14T14:11:02Z | |
| dc.date.accessioned | 2023-03-21T16:19:28Z | |
| dc.date.available | 2013-06-14T14:11:02Z | |
| dc.date.available | 2023-03-21T16:19:28Z | |
| dc.date.issued | 1999-10-15 | |
| dc.identifier.citation | C. Adelmann, E. Martinez-Guerrero, H. Mariette, G. Fuillet, and B. Daudin, Indium-Modified growth kinetis of cubic and hexagonal GaN in molecular beam epitaxy, J. Appl. Phys. Vol. 86, No. 8, pp 4322 - 4325, (1999) | es |
| dc.identifier.isbn | 0021-8979 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12032/73527 | |
| dc.description | The kinetic changes in the growth of GaN induced by the presence of In segregated on the surface has been investigated in-situ by using high energy electron diffraction intensity oscillations. Two types of surfaces have been studied, namely Ga-polar (0001) wurzite, and (001) zinc blende. It has been found that In influenced both Ga and N surface kinetics leading to a change in the growth rate associated with a change in the amount of Ga and N effectively available for the GaN growth. | es |
| dc.description.sponsorship | Consejo Nacional de Ciencia y Tecnología | es |
| dc.language.iso | eng | es |
| dc.publisher | American Institute of Physics (AIP) | es |
| dc.relation.ispartofseries | Journal of Applied Physics;8 | |
| dc.rights.uri | http://quijote.biblio.iteso.mx/licencias/CC-BY-NC-ND-2.5-MX.pdf | es |
| dc.subject | GaN | es |
| dc.subject | Ga-polar Wurzite | es |
| dc.subject | Zinc Blende | es |
| dc.title | Indium-Modified growth kinetis of cubic and hexagonal GaN in molecular beam epitaxy | es |
| dc.type | info:eu-repo/semantics/article | es |
