Optical properties of cubic AlGaN
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Date
2002-11-30Author
Fanget, Stéphane
Bru-Chevallier, Catherine
Guillot, Gérard
Martínez-Guerrero, Esteban
Jalabert, Denis
Daudin, B.
Mariette, H.
Dang, Le Si
Ferro, Gabriel
Monteil, Yves
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In this work we report optical characterization on several cubic c-AlGaN layers grown by MBE on SiC on Si pseudo-substrates, with different aluminum concentrations ranging from 0 to 70 %. Excitation power evolution of AlGaN photoluminescence (PL) spectra as well as reflectivity spectra allow to attribute PL peak to band gap recombination. PL energy dependence versus aluminum concentration is given. Reflectivity investigations are performed in the energy range between 1.5 eV and 4 eV on the samples. Theoretical calculations of multilayered structure reflectivity are fitted to experimental results, allowing an accurate determination of refractive index evolution versus Al concentration. From this analysis, qualitative information about interface roughness at AlGaN/SiC is also be derived.SFERE
Region Rhône-Alpes
Consejo Nacional de Ciencia y Tecnología